BCR 162T E6327

BCR162... PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 4.7kΩ , R2 = 4.7kΩ ) BCR162/F/L3 BCR162T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR162 WUs 1=B 2=E 2=C - - - SOT23 BCR162F WUs 1=B 2=E 2=C - - - TSFP-3 BCR162L3 WU 1=B 2=E 2=C - - - TSLP-3-4 BCR162T WUs 1=B 2=E 2=C - - - SC75 1 Package Aug-29-2003 BCR162... Maximum Ratings Parameter Symbol Value Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 10 Input on voltage Vi(on) 15 Collector current IC 100 Total power dissipation- Ptot 200 BCR162F, TS ≤ 128°C 250 BCR162L3, TS ≤ 135°C 250 BCR162T, TS ≤ 109°C 250 Tj Storage temperature Tstg Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS V mA mW BCR162, TS ≤ 102°C Junction temperature Unit 150 °C -65 ... 150 Value BCR162 ≤ 240 BCR162F ≤ 90 BCR162L3 ≤ 60 BCR162T ≤ 165 Unit K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Aug-29-2003 BCR162... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage 50 - - I CBO - - 100 nA I EBO - - 1.61 mA h FE 20 - - - - - 0.3 V Vi(off) 0.8 - 1.5 Vi(on) 1 - 2.5 V(BR)CBO IC = 10 µA, IE = 0 Collector-base cutoff current VCB = 40 V, IE = 0 Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) VCEsat IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on voltage IC = 2 mA, VCE = 0.3 V Input resistor R1 3.2 4.7 6.2 kΩ Resistor ratio R1/R 2 0.9 1 1.1 - fT - 200 - MHz Ccb - 3 - pF AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1Pulse test: t < 300µs; D < 2% 3 Aug-29-2003 BCR162... DC current gain hFE = ƒ(IC) VCE = 5 V (common emitter configuration) Collector-emitter saturation voltage VCEsat = ƒ(IC), hFE = 20 10 3 10 2 - mA IC h FE 10 2 10 1 10 1 10 0 10 -1 -1 10 10 0 10 1 mA 10 10 0 0 2 0.2 0.4 0.6 0.8 IC V 1.1 VCEsat Input on Voltage Vi(on) = ƒ(I C) VCE = 0.3V (common emitter configuration) Input off voltage V i(off) = ƒ(IC) VCE = 5V (common emitter configuration) 10 2 10 1 mA mA 10 0 IC IC 10 1 10 0 10 -1 -1 10 10 -1 10 0 10 1 V 10 10 -2 0 2 Vi(on) 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 V 2 Vi(off) 4 Aug-29-2003 BCR162... Total power dissipation Ptot = ƒ(TS) Total power dissipation Ptot = ƒ(TS) BCR162 BCR162F 300 300 mW 200 P tot P tot mW 200 150 150 100 100 50 50 0 0 20 40 60 80 100 120 °C 0 0 150 20 40 60 80 100 TS 120 °C Total power dissipation Ptot = ƒ(TS) Total power dissipation Ptot = ƒ(TS) BCR162L3 BCR162T 300 300 mW mW 200 Ptot Ptot 150 TS 200 150 150 100 100 50 50 0 0 20 40 60 80 100 120 °C 0 0 150 TS 20 40 60 80 100 120 °C 150 TS 5 Aug-29-2003 BCR162... Permissible Pulse Load RthJS = ƒ(tp ) BCR162 Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR162 10 3 10 3 P totmax / P totDC K/W RthJS 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 10 1 -2 s 10 10 0 -6 10 0 10 -5 10 -4 10 -3 10 -2 tp Permissible Pulse Load BCR162F Ptotmax/P totDC = ƒ(tp) BCR162F 10 2 0 10 0 10 3 Ptotmax /PtotDC K/W RthJS 10 tp Permissible Puls Load RthJS = ƒ (tp) D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 10 0 10 -1 -6 10 s 10 -5 10 -4 10 -3 10 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s tp 6 Aug-29-2003 BCR162... Permissible Puls Load RthJS = ƒ (tp) Permissible Pulse Load BCR162L3 Ptotmax/P totDC = ƒ(tp) BCR162L3 10 3 Ptotmax/ P totDC RthJS 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 s 10 10 0 -7 10 0 10 -6 10 -5 10 -4 10 -3 10 tp -2 s 10 0 10 0 tp Permissible Puls Load RthJS = ƒ (tp) Permissible Pulse Load BCR162T Ptotmax/P totDC = ƒ(tp) BCR162T 10 3 10 3 Ptotmax / PtotDC K/W RthJS 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 1 10 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s tp 7 Aug-29-2003 Package SC75 Package Outline 1.6 ±0.2 0.2 +0.1 -0.05 1 0.2 +0.1 -0.05 1.6 ±0.2 +0.2 acc. to DIN 6784 3 2 10˚ MAX. 0.8 ±0.1 0.1 MAX. 0.7 ±0.1 10˚ MAX. A 0.15 ±0.1 0.5 0.10 0.5 M 0.20 M A Foot Print 0.65 1.15 0.65 0.4 0.4 0.5 0.5 Marking Layout Manufacturer Pin 1 Type code BCR108T Example Packing Code E6327: Reel ø180 mm = 3.000 Pieces/Reel Code E6433: Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 MAX. 1.8 8 1.4 0.45 Pin 1 1.75 0.9 Package SOT23 Package Outline 1.1 MAX. 2.9 ±0.1 0.08...0.15 C 0.95 2˚... 30˚ 1.9 0.25 10˚ MAX. 1.3 ±0.1 2 2.6 MAX. 1 +0.2 acc. to DIN 6784 10˚ MAX. 3 0.4 +0.1 -0.05 0.1 MAX. B A M B C 0.20 M A Foot Print 0.9 1.1 0.9 0.8 0.8 1.2 Marking Layout Manufacturer Pin 1 Date code (Year/Month) 2003, July Type code BCW66 Example Packing Code E6327: Reel ø180 mm = 3.000 Pieces/Reel Code E6433: Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 Pin 1 3.15 8 2.65 2.13 0.9 1.15 Package TSFP-3 Package Outline 1.2 ±0.05 0.55 -0.05 1.2 ±0.05 2 0.1 MIN. 3 1 0.15 ±0.05 0.2 ±0.05 0.4 0.4 0.1 M A 10˚ MAX. 0.8 ±0.05 0.2 ±0.05 0.1 M A 3x 0.9 0.45 0.4 0.45 Foot Print 0.4 0.4 Marking Layout Manufacturer Pin 1 Type code BCR847BF Example Packing Code E6327: Reel ø180 mm = 3.000 Pieces/Reel Code E6433: Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 1.5 8 1.2 0.3 Pin 1 1.35 0.7 Package TSLP-3-4 Package Outline Top view Bottom view 0.4 ±0.05 0.6 S 0.05 MAX. 0.5 ±0.035 0.03 S 2x A 1) 0.1 M A B 0.05 0.05 2x 1 2 1 0.35 Orientation marking 2x 0.15 ±0.035 1) 0.1 M A B 1) Dimension applies to plated terminals 0.5 R0.1 0.2 0.225 0.2 0.225 0.17 0.15 Copper Solder mask Stencil apertures Marking Layout Type code Laser marking Packing Code E6327: Reel ø180 mm = 15.000 Pieces/Reel 0.5 Orientation marking 0.76 8 1.16 4 0.315 0.35 1 0.95 0.2 0.45 R0.19 0.38 0.6 0.255 Foot Print 0.4 ±0.035 1) 2 0.25 ±0.035 1) 1 0.575 3 3 B 0.1 M A B 0.1 M A B 2x Impressum Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München © Infineon Technologies AG 2005. 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